The Ando AP9926 is a dual N-channel enhancement mode MOSFET engineered for power management and switching applications across electronic systems. Built on PowerTrench® process technology, this surface mount device delivers efficient performance in demanding switching and power control tasks. The AP9926 family supports 2.5V gate drive operation and accommodates gate drive voltages from 2.5V to 10V, enabling integration into diverse circuit architectures.
Technical Specifications
• Device Type: Dual N-channel enhancement mode MOSFET
• Technology: PowerTrench® process
• Gate Drive Voltage: 2.5V capable; compatible with 2.5V to 10V range
• Package: Surface mount
• Manufacturers: ZP Semiconductor (AP9926); Advanced Power Electronics Corp. (AP9926M, AP9926EM-A, AP9926EO, AP9926GEM, AP9926GEO)
– Key Features
• Dual channel integration reduces PCB footprint and simplifies gate control routing
• N-channel enhancement mode architecture optimizes efficiency in high-side switching topologies when combined with appropriate gate drive circuitry
• On-resistance characteristics scale predictably with drain current, gate voltage, and junction temperature
• Integrated drain-source diode with defined maximum ratings and forward voltage characteristics
• Dynamic performance enables fast switching transitions with minimal switching losses
– Typical Applications
• DC-DC converter control stages
• Motor drive circuits
• Power distribution systems
• Load switching and protection circuits
• Battery management systems
– Compatibility & Integration
The AP9926 operates across gate drive voltages from 2.5V to 10V, accommodating both logic-level and conventional drive schemes. Surface mount packaging enables automated assembly and high-density board layouts. Multiple manufacturer variants (standard, matched pair, and screened versions) support application-specific requirements ranging from general industrial use to qualified aerospace applications.
