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Curtiss-Wright / VMETRO / Micro Memory MM-6326/64M High Speed VME / VSB Memory Module

SKU: MM-6326/64MCategories: VME Modules
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The Curtiss-Wright/VMETRO/Micro Memory MM-6326/64M is a high-speed VME/VSB memory module designed for demanding applications. It features a 64MB memory capacity and is engineered for reliable performance in VME and VSB bus architectures. This module is ideal for use in data acquisition, signal processing, and other high-performance computing systems.

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Equipment info

The MM-6326/64M is a high-speed, dual-port VME/VSB memory module delivering 64MB of DRAM capacity for demanding real-time computing, data acquisition, and signal processing applications. Engineered for military, aerospace, and industrial systems, this single-slot VMEbus card supports multiple address and data path widths across VMEbus Revision C1 and VSBbus Revision C architectures. Block Transfer modes, bank interleaving, and page mode operation enable sustained data rates exceeding 30 MB/s with read access times of 75ns and write access times as low as 50ns in optimized modes.

## Technical Specifications

**Memory & Architecture**
• Capacity: 64MB DRAM
• VMEbus: A32/A24/A16 address; D32/D16/D08 data (UAT support)
• VSBbus: A32 address; D32 data
• Block Transfer: 256 bytes (VMEbus), 64KB (VSBbus)
• Page Mode and Bank Interleave support

**Performance**
• Read Cycle/Access Time: 125ns / 75ns
• Write Cycle/Access Time: 125ns / 50ns (BLT/Page Mode/Bank Interleave)
• Data Rate: >30 MB/s

**Error Detection & Control**
• Byte-wide parity generation and checking
• VMEbus Control Status Register (CSR) for parity reporting and error control
• Write-Wrong parity mode for diagnostics
• BERR* signal transmission on parity error detection

**Module Configuration**
• Jumper-selectable address assignment on 1MB boundaries
• Independent memory banks for VME and VSB ports
• CSR located in short I/O address space
• VSB CACHEability control via CSR

**Environmental**
• Operating Temperature: 0 to +60°C
• Relative Humidity: Up to 95% (non-condensing)

**Qualification**
• Burn-in and 48-hour diagnostics with temperature cycling (0–60°C)

## Key Features

• Dual independent bus ports eliminate contention between VME and VSB masters
• Multiple address/data path widths support legacy and contemporary system architectures
• Bank interleaving and page mode reduce access latency for sequential operations
• Byte-level parity with CSR-accessible error tracking and write-wrong diagnostics
• Jumper flexibility allows deployment across address ranges without board rework

## Typical Applications

Real-time signal processing, high-speed data acquisition, embedded military avionics systems, and industrial control platforms requiring low-latency memory with integrated error detection.

## Compatibility & Integration

Fully compatible with VMEbus Revision C1 and VSBbus Revision C systems including MVME130/131, MVME135/136, MVME141, and Delta Series platforms.

MPN

MM-6326/64M

Brand Name

Curtiss-Wright / VMETRO / Micro Memory

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