The Microwave Amps AM82-001 is a GaN LINAC power amplifier engineered for pulsed microwave signal amplification in the 2.85 GHz to 3 GHz band. It delivers 750 W or 1500 W peak output power at 5% duty cycle, making it suited for radar, test and measurement, and communication systems requiring high-performance RF output with exceptional phase stability and spectral purity.
Technical Specifications
Frequency and Power Performance
• Operating frequency range: 2.85 GHz to 3 GHz
• Centre frequencies: 2.85 GHz and 2.998 GHz
• Peak output power: 750 W or 1500 W (at 5% duty cycle)
• Full power bandwidth: 20 MHz minimum
• 3 dB power bandwidth: 200 MHz typical
• Input power (rated output): 0 dBm nominal, +5 dBm maximum
• Absolute maximum input power: +20 dBm
Pulse Characteristics
• Maximum duty cycle: 5%
• Maximum input pulse width: 500 µS
• Maximum pulse repetition frequency: 10 kHz
• RF rise/fall time: 75 nS maximum
• Pulse control rise/fall time: 5 µS maximum
Output Quality
• RF output phase stability (in pulse): 1° maximum
• RF output stability: 0.2 dB/10 µS and 0.8 dB/500 µS at peak output
• Non-harmonic spurious output: >−100 dBc
• Input return loss: 14 dB minimum
• Output return loss: 18 dB minimum
• Noise figure: 6 dB typical
Physical and Power
• Dimensions: 19″ × 3U × 550 mm (rack or bench top)
• Weight: 18 kg nominal
• System power supply: 230 VAC, 1-phase
• Operating temperature: 0 to 50°C ambient
• Storage temperature: −20 to 85°C
– Key Features
• GaN transistor technology for efficient high-power pulsed operation
• TTL remote enable and pulse control for seamless integration
• Exceptional phase linearity and output stability within RF pulse
• Low spurious content suitable for demanding radar and test applications
• Compact 3U rack-mount form factor
– Typical Applications
• Radar system testing and validation
• Test and measurement environments requiring pulsed RF output
• Communication system characterization
• High-power microwave signal generation
