The HP/Agilent 4155B Semiconductor Parameter Analyzer delivers precision DC characterization across a wide dynamic range, from femtoampere-level leakage currents to full-ampere measurements. This four-channel configurable system combines voltage sourcing, current monitoring, and pulse generation to support I-V characterization, reliability testing, and stress-measure cycling protocols essential to semiconductor development and qualification.
## Technical Specifications
**Measurement Ranges and Accuracy**
• Current: 1 fA to 1 A with 20 fA offset accuracy
• Voltage: 1 µV to 200 V across three measurement ranges; 1 µV resolution
• Time-domain sampling: 60 µs to variable intervals, up to 10,001 points
• Voltage compliance: 0 V to ±100 V
• Current compliance: ±100 fA to ±100 mA
• Input impedance: 1 MΩ
**Source and Monitor Architecture**
• Four built-in SMUs (Source/Monitor Units) supporting voltage source and monitor configurations
• Expandable to six SMUs via HP 41501B expander module
• Two high-voltage pulse generator units: ±40 V
• Low current offset capability: 3 pA (improved versus 6 pA on HP 4145A/B)
**Measurement Modes**
• DC staircase sweep and pulse sweep automation
• Time-domain sampling measurement
• Stress-measure cycling for hot carrier injection and flash EEPROM evaluation
• Time Dependent Dielectric Breakdown (TDDB) oxide reliability testing
## Key Features
• Automated parameter extraction and display via built-in analysis functions
• Color LCD display with four graphic memory superposition capability
• HP Instrument BASIC and SCPI command programming
• Kelvin remote sensing not available on 4155B (available on 4156B variant)
• Trigger I/O synchronization for coordinated multi-instrument measurements
## Data Management
• MS-DOS compatible disk storage in MS-DOS or LIF format
• Data transfer via GPIB, parallel port, or 10Base-T LAN
• LAN connectivity standard for rapid data streaming
## Typical Applications
Device characterization in silicon process development, reliability qualification of oxide stacks, leakage current trending, threshold voltage extraction, and MOSFET parameter verification.
