The Keithley 2600-PCT-4B is a parametric curve tracer system for precise characterization of semiconductor devices. It integrates Source-Measure Unit (SMU) technology with specialized software to capture current-voltage (I-V) and capacitance-voltage (C-V) characteristics across a wide range of power devices. The system supports MOSFETs, BJTs, IGBTs, diodes, TRIACs, GaN, SiC, and LDMOS devices, making it suitable for research, reliability studies, and incoming inspection workflows.
Technical Specifications
Power Configurations
• High Voltage Mode: 3 kV at 120 mA
• High Current Mode: 40 V at 50 A
• Field upgradable and reconfigurable architecture
Measurement Ranges
• Voltage: µV to kV
• Current: fA to 100 A
• Capacitance: fF to µF
• C-V bias: Up to 3 kV DC
Device Support
• MOSFETs, BJTs, IGBTs, diodes, TRIACs, capacitors, resistors
• GaN and SiC devices
• LDMOS and other power semiconductors
• 2, 3, and 4 terminal device configurations
– Key Features
Measured Parameters
• Breakdown voltage (Bvdss, Bvceo)
• On-state voltage (Vdson, Vcesat, Vf)
• Leakage currents (Idss, Icbo, Iceo, Igss, Ib)
• Threshold and cutoff voltages (Vth, Vf, Vbeon)
• Forward transfer parameters (yfs, Gfs, Hfe, gain)
• Capacitance values (Ciss, Coss, Crss)
Software Capabilities
• ACS Basic Edition optimized for Keithley instruments
• Real-time trace mode for fundamental parameter checks
• Full parametric mode for precise parameter extraction
• Sample libraries for common high-power device tests
• User-defined test creation with complete resource control
– System Architecture
Typical configurations include dual-channel and high-power SMU instruments (2636B, 2651A, 2657A), compatible cables and adapters, and USB to GPIB interface (KUSB-488B) for system control and data acquisition.
– Typical Applications
Semiconductor device characterization, parametric testing of power switches, gate driver validation, thermal stress analysis, and quality assurance testing across development, production, and field reliability programs.
